IXFH21N50F - IXYS Corporation

IXFH21N50F HiPerRF Power MOSFETs

Advance Technical Information HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFH 21N50F VDSS IXFT 21N50F ID25 RDS(on) = 500 V = 21A = 250mΩ trr ≤ 250 ns TO-247 AD (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (.

Features

l RF capable MOSFETs l Double metal process for low gate resistance l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier Applications l DC-DC converters l Switched-mode and resonant-mode power supplies, >500kHz switching l DC choppers l 13.5 MHz industrial applications l Pulse generation l Laser drivers l RF amplifiers Advantages l Space savings l High power density Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 3.0 V 5.5 V ±100 nA TJ = 125°C 50 µA 1.5 mA 250 m .