PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH IXFT IXFV IXFV 20N80P 20N80P 20N80P 20N80PS VDSS ID25 RDS(on) trr = 800 V = 20 A ≤ 520 m Ω ≤ 250 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR E AS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; R.
D = Drain Tab = Drain Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125° C Characteristic Values Min. Typ. Max. 800 3.0 5.0 ± 200 25 1000 520 V V nA µA µA mΩ l l l l International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l VGS = 10 V, ID = 10 A Pulse test, t ≤300 µs, duty cycle d ≤ 2 % Easy to mount Space savings High power density DS995.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFH20N80Q |
IXYS Corporation |
HiPerFETTM Power MOSFETs Q-Class | |
2 | IXFH20N85X |
IXYS |
Power MOSFET | |
3 | IXFH20N85X |
INCHANGE |
N-Channel MOSFET | |
4 | IXFH20N100P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
5 | IXFH20N50P3 |
IXYS |
Power MOSFET | |
6 | IXFH20N60 |
IXYS Corporation |
(IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching | |
7 | IXFH20N60 |
IXYS Corporation |
Power MOSFET | |
8 | IXFH20N60Q |
IXYS Corporation |
HiPerFET Power MOSFETs Q-Class | |
9 | IXFH21N50 |
IXYS Corporation |
Power MOSFET | |
10 | IXFH21N50F |
IXYS Corporation |
HiPerRF Power MOSFETs | |
11 | IXFH21N50Q |
IXYS |
Power MOSFET | |
12 | IXFH21N60 |
IXYS Corporation |
(IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching |