IXFH21N50 - IXYS Corporation

IXFH21N50 Power MOSFET

HiPerFETTM Power MOSFETs IXFH/IXFM21N50 IXFH/IXFM/IXFT24N50 IXFH/IXFT26N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family OBSOLETE: IXFM21N50 IXFM24N50 Symbol Test Conditions Maximum Ratings VDSS ID25 RDS(on) 500 V 21 A 0.25 Ω 500 V 24 A 0.23 Ω 500 V 26 A 0.20 Ω t rr ≤ 250 ns TO-247 AD (IXFH) VDSS VDGR VGS V GSM ID25 IDM IAR EA.

Features

• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance - easy to drive and to protect
• Fast intrinsic Rectifier Symbol VDSS VGS(th) IGSS IDSS Test Conditions VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = 0.8
• VDSS VGS = 0 V Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 TJ = 25°C TJ = 125°C V 4V ±100 nA 200 µA 1 mA Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mo.