IXFH14N85XHV - INCHANGE

IXFH14N85XHV N-Channel MOSFET

isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS ≥ 850V ·Static Drain-Source On-Resistance : RDS(on) ≤ 550mΩ@VGS= 10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·DC-DC Converters ·Switch-Mode and Resonant-Mode Power Supplies ·ABSOLUTE MAXIM.

Features

·Drain Source Voltage- : VDSS ≥ 850V
·Static Drain-Source On-Resistance : RDS(on) ≤ 550mΩ@VGS= 10V
·Fast Switching
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
·APPLICATIONS
·DC-DC Converters
·Switch-Mode and Resonant-Mode Power Supplies
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 850 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 14 A IDM Drain Current-Single Plused 35 A PD Total Dissipation @TC=25℃ 460 W Tj Max. Operating Junction Tempe.