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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS ≥850V ·Static Drain-Source On-Resistance : RDS(on) ≤ 550mΩ@VGS= 10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·DC-DC Converters ·Switch-Mode and Resonant-Mode Power Supplies ·ABSOLUTE MAXIMU.
·Drain Source Voltage-
: VDSS ≥850V
·Static Drain-Source On-Resistance
: RDS(on) ≤ 550mΩ@VGS= 10V
·Fast Switching
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·DC-DC Converters
·Switch-Mode and Resonant-Mode Power Supplies
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
850
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
14
A
IDM
Drain Current-Single Plused
35
A
PD
Total Dissipation @TC=25℃
460
W
Tj
Max. Operating Junction Temper.
IXFH14N85X - IXYS
X-Class HiPerFETTM Power MOSFET Preliminary Technical Information IXFA14N85XHV IXFP14N85X IXFH14N85X VDSS = ID25 = .
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