TrenchT2TM HiperFETTM Power MOSFET IXFA230N075T2 IXFP230N075T2 VDSS ID25 RDS(on) = 75V = 230A ≤ 4.2mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXFA) G S D (Tab) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL Tsold Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C,.
z z 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-220) TO-263 TO-220 300 260 1.13 / 10 2.5 3.0 International Standard Packages 175°C Operating Temperature z High Current Handling Capability z Avalanche Rated z Fast Intrinsic Rectifier z Low RDS(on) Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 250μA VDS = VGS, ID = 1mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 150°C VGS = 10V, ID = 50A, Note 1 Characteristic Values Min. Typ. Max. 75 2.0 4.0 V V z Easy to Mount Space S.
isc N-Channel MOSFET Transistor IXFA230N075T2 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 4.2mΩ@VGS=10V ·F.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFA230N075T2-7 |
IXYS |
Power MOSFET | |
2 | IXFA20N50P3 |
IXYS |
Power MOSFET | |
3 | IXFA20N85XHV |
IXYS |
Power MOSFET | |
4 | IXFA20N85XHV |
INCHANGE |
N-Channel MOSFET | |
5 | IXFA220N06T3 |
INCHANGE |
N-Channel MOSFET | |
6 | IXFA220N06T3 |
IXYS |
Power MOSFET | |
7 | IXFA22N60P3 |
IXYS Corporation |
Power MOSFETs | |
8 | IXFA22N65X2 |
IXYS |
Power MOSFET | |
9 | IXFA22N65X2 |
INCHANGE |
N-Channel MOSFET | |
10 | IXFA24N60X |
IXYS |
Power MOSFET | |
11 | IXFA24N60X |
INCHANGE |
N-Channel MOSFET | |
12 | IXFA24N65X2 |
INCHANGE |
N-Channel MOSFET |