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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor IXFA20N85XHV ·APPLICATIONS ·Power supply ·Switching applications .
·With TO-263( D2PAK ) packaging
·High speed switching
·Low gate input resistance
·Standard level gate drive
·Easy to use
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
INCHANGE Semiconductor
IXFA20N85XHV
·APPLICATIONS
·Power supply
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
850
VGSS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
20
IDM
Drain Current-Single Pulsed
50
PD
Total Dissipation
540
Tj
Operating Junction Temperature
150
Tstg
Storage .
IXFA20N85XHV - IXYS
X-Class HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXFA20N85XHV VDSS = ID25 = RDS(on) 850V .
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