Advance Technical Information TrenchT3TM HiperFETTM Power MOSFET IXFA220N06T3 IXFP220N06T3 IXFH220N06T3 VDSS = ID25 = RDS(on) 60V 220A 4m N-Channel Enhancement Mode Avalanche Rated Fast Intrnsic Rectifier TO-263 AA (IXFA) Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL SOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to.
International Standard Packages
175°C Operating Temperature
High Current Handling Capability
Avalanche Rated
Fast Intrinsic Rectifier
Low RDS(on)
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
DC-DC Converters & Off-Line UPS
Primary-Side Switch
High Current Switching Applications
© 2016 IXYS CORPORATION, All Rights Reserved
DS100730(5/16)
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 60A, Note 1
Ciss Coss Crss
VGS = 0V, VDS = 25V, f = 1MHz
RGi
Gate Input Resistance
td(on) tr td(off) tf
Resistive S.
isc N-Channel MOSFET Transistor IXFA220N06T3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 4mΩ@VGS=10V ·Full.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFA22N60P3 |
IXYS Corporation |
Power MOSFETs | |
2 | IXFA22N65X2 |
IXYS |
Power MOSFET | |
3 | IXFA22N65X2 |
INCHANGE |
N-Channel MOSFET | |
4 | IXFA20N50P3 |
IXYS |
Power MOSFET | |
5 | IXFA20N85XHV |
IXYS |
Power MOSFET | |
6 | IXFA20N85XHV |
INCHANGE |
N-Channel MOSFET | |
7 | IXFA230N075T2 |
IXYS Corporation |
Power MOSFET | |
8 | IXFA230N075T2 |
INCHANGE |
N-Channel MOSFET | |
9 | IXFA230N075T2-7 |
IXYS |
Power MOSFET | |
10 | IXFA24N60X |
IXYS |
Power MOSFET | |
11 | IXFA24N60X |
INCHANGE |
N-Channel MOSFET | |
12 | IXFA24N65X2 |
INCHANGE |
N-Channel MOSFET |