IW4023B - IK Semiconductor

IW4023B Triple 3-Input NAND GAte

TECHNICAL DATA IW4023B Triple 3-Input NAND Gate High-Voltage Silicon-Gate CMOS The IW4023B NAND gates provide the system designer with direct emplementation of the NAND function. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 µA at 18 V over full package-temperature range; 100 nA at 18 V and 25°C • Noise margin (over full package tempe.

Features

astic DIP+ SOIC Package+ Power Dissipation per Output Transistor Storage Temperature Lead Temperature, 1 mm from Case for 10 Seconds (Plastic DIP or SOIC Package) Value -0.5 to +20 -0.5 to VCC +0.5 -0.5 to VCC +0.5 ±10 750 500 100 -65 to +150 260 Unit V V V mA mW mW °C °C Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. +Derating - Plastic DIP: - 10 mW/°C from 65° to 125°C SOIC Package: : - 7 mW/°C from 65° to 125°C RECOMMENDED OPERATING CONDITIONS Symbol VCC VIN, VOUT TA Paramet.