ISL70024SEH - Intersil

ISL70024SEH 7.5A Enhancement Mode GaN Power Transistor

Pin Number 1 2 3 4 NA Pin Name Description S Source connection for the GaN FET. SUB Substrate connection for the GaN FET which is internally shorted in to source. Tie this pin to source on the PCB. D Drain.

Features

• Very low rDS(ON) 45mΩ (typical)
• Ultra low total gate charge 2.5nC (typical)
• SEE hardness (see SEE report for details)
• SEL/SEB LETTH (VDS = 160V, VGS = 0V): 86MeV
•cm2/mg
• ISL70024SEH radiation acceptance (see TID report)
• High dose rate (50-300rad(Si)/s): 100krad(Si)
• Low dose rate (0.01rad(Si)/s): 75krad(Si)
• ISL73024SEH radiation acceptance (see TID report)
• Low dose rate (0.01rad(Si)/s): 75krad(Si)
• Ultra small hermetically sealed 4 Ld Surface Mount Device (SMD) package
• Package area: 42mm2
• Full military-temperature range operation
• TA = -55°C to +125°C
• TJ = -55°C to +150.