ISL70020SEH - Intersil

ISL70020SEH 65A Enhancement Mode GaN Power Transistors

Datasheet ISL70020SEH, ISL73020SEH 40V, 65A Enhancement Mode GaN Power Transistors The ISL70020SEH and ISL73020SEH are 40V N-channel enhancement mode GaN power transistors. These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation. Applications for these devices include commercial a.

Features

• Very low rDS(ON) 3.5mΩ (typical)
• Ultra low total gate charge 19nC (typical)
• ISL70020SEH radiation acceptance testing ○ High dose rate (50-300rad(Si)/s): 100krad(Si) ○ Low dose rate (0.01rad(Si)/s): 75krad(Si)
• ISL73020SEH radiation acceptance testing ○ Low dose rate (0.01rad(Si)/s): 75krad(Si)
• SEE hardness (see the SEE report for details) ○ SEL/SEB LETTH (VDS = 40V, VGS = 0V): 86.4MeV
•cm2/mg(Si)
• Ultra small hermetically sealed 4 Ld Surface Mount Device (SMD) package ○ Package area: 42mm2
• Full military-temperature range operation ○ TA = -55°C to +125°C ○ TJ = -55°C to +150°C
• Qual.