IS66WVE51216EALL - ISSI

IS66WVE51216EALL 8Mb Async/Page PSRAM

PSRAM products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications. The 8Mb DRAM core device is organized as 512K x 16 bits. These devices include the industry-standard, asynchronous memory interface found on other low-power SRAM or pseudo-SRAM (PSRAM) offerings. For seamless operation on an asynchronous mem.

Features

 Asynchronous and page mode interface
 Dual voltage rails for optional performance
 ALL: VDD 1.7V~1.95V, VDDQ 1.7V~1.95V
 BLL: VDD 2.7V~3.6V, VDDQ 2.7V~3.6V
 CLL: VDD 1.7V~1.95V, VDDQ 2.7V~3.6V
 Page mode read access
 Interpage Read access : 60ns, 70ns
 Intrapage Read access : 25ns
 Low Power Consumption
 Asynchronous Operation < 30 mA
 Intrapage Read < 23 mA
 Standby < 150 uA (max.)
 Deep power-down (DPD)
 ALL/CLL: < 3µA (Typ)
 BLL: < 10µA (Typ)
 Low Power Feature
 Temperature Controlled Refresh
 Partial Array Refresh
 Deep power-down (DPD) mode
 Operating temperature Ran.