The ISSI IS64LV6416AL is a high-speed, 1,048,576-bit static RAM organized as 65,536 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 20ns with low power consumption. When CE is HIGH (deselected), the device assumes a.
• High-speed access time: 20 ns
• CMOS low power operation: 38 mW (typical) operating 10 µW (typical) standby
• TTL compatible interface levels
• Single power supply: 2.6V (-5%/+10%)
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Automotive temperature available
DESCRIPTION The ISSI IS64LV6416AL is a high-speed, 1,048,576-bit
static RAM organized as 65,536 words by 16 bits. It
is fabricated using ISSI's high-performance CMOS
technology. This highly reliable process coupled with innovative circuit design tec.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IS64LV51216 |
Integrated Silicon Solution |
(IS61LV51216 / IS64LV51216) 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM | |
2 | IS64LF12832A |
ISSI |
(IS6xxFxxxxxA) Synchronous Flow-through Static RAM | |
3 | IS64LF12832EC |
ISSI |
SYNCHRONOUS FLOW-THROUGH SRAM | |
4 | IS64LF12836A |
ISSI |
(IS6xxFxxxxxA) Synchronous Flow-through Static RAM | |
5 | IS64LF12836EC |
ISSI |
SYNCHRONOUS FLOW-THROUGH SRAM | |
6 | IS64LF25618A |
ISSI |
(IS6xxFxxxxxA) Synchronous Flow-through Static RAM | |
7 | IS64LF25618EC |
ISSI |
SYNCHRONOUS FLOW-THROUGH SRAM | |
8 | IS64LPS102436B |
ISSI |
36Mb Single CYCLE DESELECT STATIC RAM | |
9 | IS64LPS12832A |
Integrated Silicon Solution |
4Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM | |
10 | IS64LPS12832EC |
ISSI |
SINGLE CYCLE DESELECT SRAM | |
11 | IS64LPS12836A |
Integrated Silicon Solution |
4Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM | |
12 | IS64LPS12836EC |
ISSI |
SINGLE CYCLE DESELECT SRAM |