APRIL 2017 Internal self-timed write cycle Individual Byte Write Control and Global Write Clock controlled, registered address, data and control Burst sequence control using MODE input Three chip enable option for simple depth expansion and address pipelining Common data inputs and data outputs Auto Power-down during deselect The 4Mb product.
DESCRIPTION
APRIL 2017
Internal self-timed write cycle
Individual Byte Write Control and Global Write
Clock controlled, registered address, data and
control
Burst sequence control using MODE input
Three chip enable option for simple depth
expansion and address pipelining
Common data inputs and data outputs
Auto Power-down during deselect
The 4Mb product family features high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61(64)LF/VF12836EC are organized as 131,072 words by 36b.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IS64LF12832A |
ISSI |
(IS6xxFxxxxxA) Synchronous Flow-through Static RAM | |
2 | IS64LF12836A |
ISSI |
(IS6xxFxxxxxA) Synchronous Flow-through Static RAM | |
3 | IS64LF12836EC |
ISSI |
SYNCHRONOUS FLOW-THROUGH SRAM | |
4 | IS64LF25618A |
ISSI |
(IS6xxFxxxxxA) Synchronous Flow-through Static RAM | |
5 | IS64LF25618EC |
ISSI |
SYNCHRONOUS FLOW-THROUGH SRAM | |
6 | IS64LPS102436B |
ISSI |
36Mb Single CYCLE DESELECT STATIC RAM | |
7 | IS64LPS12832A |
Integrated Silicon Solution |
4Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM | |
8 | IS64LPS12832EC |
ISSI |
SINGLE CYCLE DESELECT SRAM | |
9 | IS64LPS12836A |
Integrated Silicon Solution |
4Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM | |
10 | IS64LPS12836EC |
ISSI |
SINGLE CYCLE DESELECT SRAM | |
11 | IS64LPS204818B |
ISSI |
36Mb Single CYCLE DESELECT STATIC RAM | |
12 | IS64LPS25618A |
Integrated Silicon Solution |
4Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM |