IS64LF12836EC - ISSI

IS64LF12836EC SYNCHRONOUS FLOW-THROUGH SRAM

APRIL 2017  Internal self-timed write cycle  Individual Byte Write Control and Global Write  Clock controlled, registered address, data and control  Burst sequence control using MODE input  Three chip enable option for simple depth expansion and address pipelining  Common data inputs and data outputs  Auto Power-down during deselect The 4Mb product.

Features

DESCRIPTION APRIL 2017
 Internal self-timed write cycle
 Individual Byte Write Control and Global Write
 Clock controlled, registered address, data and control
 Burst sequence control using MODE input
 Three chip enable option for simple depth expansion and address pipelining
 Common data inputs and data outputs
 Auto Power-down during deselect The 4Mb product family features high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications. The IS61(64)LF/VF12836EC are organized as 131,072 words by 36b.