IS62C5128EL ULTRA LOW POWER CMOS STATIC RAM Datasheet

IS62C5128EL ULTRA LOW POWER CMOS STATIC RAM

The ISSI IS62/65C5128EL are high-speed, 4M bit static RAMs organized as 512K words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS# is HIGH (deselected), the device assumes a standby mod.

Features

 High-speed access time: 45ns, 55ns
 CMOS low power operation
– Operating Current: 22 mA (max) at 85°C
– CMOS Standby Current: 5.0uA (typ) at 25°C
 TTL compatible interface levels
 Single 5V ± 10 % power supply
 Three state outputs
 Industrial and Automotive temperature support
 Lead-free available FUNCTIONAL BLOCK DIAGRAM DESCRIPTION The ISSI IS62/65C5128EL are high-speed, 4M bit static RAMs organized as 512K words by 8 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-perfo.

No.	Partie #	Fabricant	Description
1	IS62C5128BL	ISSI	512K x 8 HIGH-SPEED CMOS STATIC RAM
2	IS62C51216AL	Integrated Silicon Solution	ULTRA LOW POWER CMOS STATIC RAM
3	IS62C1024	ISSI	128K x 8 HIGH-SPEED CMOS STATIC RAM
4	IS62C1024AL	ISSI	128K x 8 LOW POWER CMOS STATIC RAM
5	IS62C1024L	Integrated Silicon Solution Inc	128K x 8 LOW POWER CMOS STATIC RAM
6	IS62C256	ISSI	32K x 8 LOW POWER CMOS STATIC RAM
7	IS62C25616BL	ISSI	256K x 16 HIGH-SPEED CMOS STATIC RAM
8	IS62C25616EL	ISSI	ULTRA LOW POWER CMOS STATIC RAM
9	IS62C256AL	Integrated Silicon Solution	32K x 8 LOW POWER CMOS STATIC RAM
10	IS62C6416AL	Integrated Silicon Solution	64K x 16 HIGH-SPEED CMOS STATIC RAM
11	IS620	ETC	OPTICALLY COUPLED BILATERAL SWITCH LIGHT ACTIVATED ZERO VOLTAGE CROSSING TRIAC
12	IS621	ETC	OPTICALLY COUPLED BILATERAL SWITCH LIGHT ACTIVATED ZERO VOLTAGE CROSSING TRIAC

IS62C5128EL - ISSI

IS62C5128EL ULTRA LOW POWER CMOS STATIC RAM

Features

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