The ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSI's high- performance, low power CMOS technology. When CS is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 250 µW (typical) at CMOS input levels. Easy memory expansion is provided by using an active LO.
• Access time: 45, 70 ns
• Low active power: 200 mW (typical)
• Low standby power
— 250 µW (typical) CMOS standby — 28 mW (typical) TTL standby
• Fully static operation: no clock or refresh required
• TTL compatible inputs and outputs
• Single 5V power supply
DESCRIPTION The ISSI IS62C256 is a low power, 32,768 word by 8-bit CMOS static RAM. It is fabricated using ISSI's high-
performance, low power CMOS technology.
When CS is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down to 250 µW (typical) at CMOS input levels.
Easy memory expansion .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IS62C25616BL |
ISSI |
256K x 16 HIGH-SPEED CMOS STATIC RAM | |
2 | IS62C25616EL |
ISSI |
ULTRA LOW POWER CMOS STATIC RAM | |
3 | IS62C256AL |
Integrated Silicon Solution |
32K x 8 LOW POWER CMOS STATIC RAM | |
4 | IS62C1024 |
ISSI |
128K x 8 HIGH-SPEED CMOS STATIC RAM | |
5 | IS62C1024AL |
ISSI |
128K x 8 LOW POWER CMOS STATIC RAM | |
6 | IS62C1024L |
Integrated Silicon Solution Inc |
128K x 8 LOW POWER CMOS STATIC RAM | |
7 | IS62C51216AL |
Integrated Silicon Solution |
ULTRA LOW POWER CMOS STATIC RAM | |
8 | IS62C5128BL |
ISSI |
512K x 8 HIGH-SPEED CMOS STATIC RAM | |
9 | IS62C5128EL |
ISSI |
ULTRA LOW POWER CMOS STATIC RAM | |
10 | IS62C6416AL |
Integrated Silicon Solution |
64K x 16 HIGH-SPEED CMOS STATIC RAM | |
11 | IS620 |
ETC |
OPTICALLY COUPLED BILATERAL SWITCH LIGHT ACTIVATED ZERO VOLTAGE CROSSING TRIAC | |
12 | IS621 |
ETC |
OPTICALLY COUPLED BILATERAL SWITCH LIGHT ACTIVATED ZERO VOLTAGE CROSSING TRIAC |