IS62C25616BL 256K x 16 HIGH-SPEED CMOS STATIC RAM Datasheet

IS62C25616BL 256K x 16 HIGH-SPEED CMOS STATIC RAM

The ISSI IS62C25616BL and IS65C25616BL are high- speed, 4,194,304-bit static RAMs organized as 262,144 words by 16 bits. They are fabricated using ISSI's high- performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low power consumption. When CE is HIGH (deselected.

Features

• High-speed access time: 45 ns
• Low Active Power: 50 mW (typical)
• Low Standby Power: 10 mW (typical) CMOS standby
• TTL compatible interface levels
• Single 5V ± 10% power supply
• Fully static operation: no clock or refresh required
• Package: 44-pin TSOP (Type II)
• Commercial, Industrial and Automotive temper- ature ranges available
• Lead-free available DESCRIPTION The ISSI IS62C25616BL and IS65C25616BL are high- speed, 4,194,304-bit static RAMs organized as 262,144 words by 16 bits. They are fabricated using ISSI's high- performance CMOS technology.This highly reliable process couple.

No.	Partie #	Fabricant	Description
1	IS62C25616EL	ISSI	ULTRA LOW POWER CMOS STATIC RAM
2	IS62C256	ISSI	32K x 8 LOW POWER CMOS STATIC RAM
3	IS62C256AL	Integrated Silicon Solution	32K x 8 LOW POWER CMOS STATIC RAM
4	IS62C1024	ISSI	128K x 8 HIGH-SPEED CMOS STATIC RAM
5	IS62C1024AL	ISSI	128K x 8 LOW POWER CMOS STATIC RAM
6	IS62C1024L	Integrated Silicon Solution Inc	128K x 8 LOW POWER CMOS STATIC RAM
7	IS62C51216AL	Integrated Silicon Solution	ULTRA LOW POWER CMOS STATIC RAM
8	IS62C5128BL	ISSI	512K x 8 HIGH-SPEED CMOS STATIC RAM
9	IS62C5128EL	ISSI	ULTRA LOW POWER CMOS STATIC RAM
10	IS62C6416AL	Integrated Silicon Solution	64K x 16 HIGH-SPEED CMOS STATIC RAM
11	IS620	ETC	OPTICALLY COUPLED BILATERAL SWITCH LIGHT ACTIVATED ZERO VOLTAGE CROSSING TRIAC
12	IS621	ETC	OPTICALLY COUPLED BILATERAL SWITCH LIGHT ACTIVATED ZERO VOLTAGE CROSSING TRIAC

IS62C25616BL - ISSI

IS62C25616BL 256K x 16 HIGH-SPEED CMOS STATIC RAM

Features

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