The ISSI IS61C256AL is a very high-speed, low power, 32,768 word by 8-bit static RAMs. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns maximum. When CE is HIGH (deselected), the device assumes a standby mode at which the power .
• High-speed access time: 10, 12 ns
• CMOS Low Power Operation
— 1 mW (typical) CMOS standby — 125 mW (typical) operating
• Fully static operation: no clock or refresh required
• TTL compatible inputs and outputs
• Single 5V power supply
• Lead-free available
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION
The ISSI IS61C256AL is a very high-speed, low power, 32,768 word by 8-bit static RAMs. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns maximum.
When CE is HIGH (deselect.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IS61C256AH |
Integrated Silicon Solution |
32K x 8 HIGH-SPEED CMOS STATIC RAM | |
2 | IS61C256 |
Integrated Silicon Solution |
32K x 8 Low Voltage CMOS STATIC RAM | |
3 | IS61C25616 |
Integrated Silicon Solution |
256K x 8 High Speed CMOS STATIC RAM | |
4 | IS61C25616AL |
Integrated Silicon Solution |
256K x 16 HIGH-SPEED CMOS STATIC RAM | |
5 | IS61C25616AS |
Integrated Silicon Solution |
256K x 16 HIGH-SPEED CMOS STATIC RAM | |
6 | IS61C1024 |
Integrated Silicon Solution |
128K x 8 HIGH-SPEED CMOS STATIC RAM | |
7 | IS61C1024AL |
ISSI |
128K x 8 HIGH-SPEED CMOS STATIC RAM | |
8 | IS61C1024L |
Integrated Silicon Solution |
128K x 8 HIGH-SPEED CMOS STATIC RAM | |
9 | IS61C3216 |
ISSI |
32K x 16 HIGH-SPEED CMOS STATIC RAM | |
10 | IS61C3216AL |
Integrated Silicon Solution |
32K x 16 HIGH-SPEED CMOS STATIC RAM | |
11 | IS61C512 |
Integrated Silicon Solution |
64K x 8 High Speed CMOS Static RAM | |
12 | IS61C5128 |
Integrated Silicon Solution |
512K x 8 High Speed CMOS Static RAM |