The ISSI IS61C1024 and IS61C1024L are very high-speed, low power, 131,072-word by 8-bit CMOS static RAMs. They are fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE1 is HIGH or CE2 is LOW (deselected), t.
• High-speed access time: 12, 15, 20, 25 ns
• Low active power: 600 mW (typical)
• Low standby power: 500 µW (typical) CMOS
standby
• Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications
• Fully static operation: no clock or refresh required
• TTL compatible inputs and outputs
• Single 5V (±10%) power supply
• Low power version available: IS61C1024L
• Commercial and industrial temperature ranges
available
DESCRIPTION
The ISSI IS61C1024 and IS61C1024L are very high-speed,
low power, 131,072-word by 8-bit CMOS static RAMs. They are fabricated using ISSI's high-pe.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IS61C1024 |
Integrated Silicon Solution |
128K x 8 HIGH-SPEED CMOS STATIC RAM | |
2 | IS61C1024AL |
ISSI |
128K x 8 HIGH-SPEED CMOS STATIC RAM | |
3 | IS61C256 |
Integrated Silicon Solution |
32K x 8 Low Voltage CMOS STATIC RAM | |
4 | IS61C25616 |
Integrated Silicon Solution |
256K x 8 High Speed CMOS STATIC RAM | |
5 | IS61C25616AL |
Integrated Silicon Solution |
256K x 16 HIGH-SPEED CMOS STATIC RAM | |
6 | IS61C25616AS |
Integrated Silicon Solution |
256K x 16 HIGH-SPEED CMOS STATIC RAM | |
7 | IS61C256AH |
Integrated Silicon Solution |
32K x 8 HIGH-SPEED CMOS STATIC RAM | |
8 | IS61C256AL |
Integrated Silicon Solution |
32K x 8 High Speed CMOS STATIC RAM | |
9 | IS61C3216 |
ISSI |
32K x 16 HIGH-SPEED CMOS STATIC RAM | |
10 | IS61C3216AL |
Integrated Silicon Solution |
32K x 16 HIGH-SPEED CMOS STATIC RAM | |
11 | IS61C512 |
Integrated Silicon Solution |
64K x 8 High Speed CMOS Static RAM | |
12 | IS61C5128 |
Integrated Silicon Solution |
512K x 8 High Speed CMOS Static RAM |