The ISSI IS61C25616AL/AS and IS64C25616AL/AS are high-speed, 4,194,304-bit static RAMs organized as 262,144 words by 16 bits. They are fabricated using ISSI's high- performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low power consumption. When CE is HIGH (dese.
HIGH SPEED: (IS61/64C25616AL)
• High-speed access time: 10ns, 12 ns
• Low Active Power: 150 mW (typical)
• Low Standby Power: 10 mW (typical)
CMOS standby LOW POWER: (IS61/64C25616AS)
• High-speed access time: 25 ns
• Low Active Power: 75 mW (typical)
• Low Standby Power: 1 mW (typical)
CMOS standby
• TTL compatible interface levels
• Single 5V ± 10% power supply
• Fully static operation: no clock or refresh
required
• Available in 44-pin SOJ package and
44-pin TSOP (Type II)
• Commercial, Industrial and Automotive tempera-
ture ranges available
• Lead-free available
MARCH 2020
DESCRIPTION Th.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IS61C25616AS |
Integrated Silicon Solution |
256K x 16 HIGH-SPEED CMOS STATIC RAM | |
2 | IS61C25616 |
Integrated Silicon Solution |
256K x 8 High Speed CMOS STATIC RAM | |
3 | IS61C256 |
Integrated Silicon Solution |
32K x 8 Low Voltage CMOS STATIC RAM | |
4 | IS61C256AH |
Integrated Silicon Solution |
32K x 8 HIGH-SPEED CMOS STATIC RAM | |
5 | IS61C256AL |
Integrated Silicon Solution |
32K x 8 High Speed CMOS STATIC RAM | |
6 | IS61C1024 |
Integrated Silicon Solution |
128K x 8 HIGH-SPEED CMOS STATIC RAM | |
7 | IS61C1024AL |
ISSI |
128K x 8 HIGH-SPEED CMOS STATIC RAM | |
8 | IS61C1024L |
Integrated Silicon Solution |
128K x 8 HIGH-SPEED CMOS STATIC RAM | |
9 | IS61C3216 |
ISSI |
32K x 16 HIGH-SPEED CMOS STATIC RAM | |
10 | IS61C3216AL |
Integrated Silicon Solution |
32K x 16 HIGH-SPEED CMOS STATIC RAM | |
11 | IS61C512 |
Integrated Silicon Solution |
64K x 8 High Speed CMOS Static RAM | |
12 | IS61C5128 |
Integrated Silicon Solution |
512K x 8 High Speed CMOS Static RAM |