IS42VS83200J - ISSI

IS42VS83200J 256Mb Synchronous DRAM

ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All input and output signals refer to the rising edge of the clock input. Both write and read accesses to the SDRAM are burst oriented. The 256Mb Synchronous DRAM is designed to minimize power consumption making it ideal for.

Features

• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access and pre- charge
• Programmable CAS latency: 2, 3
• Programmable Burst Length: 1, 2, 4, 8, and Full Page
• Programmable Burst Sequence:
  – Sequential and Interleave
• Auto Refresh (CBR) OPTIONS
• Configurations:
  – 32M x 8
  – 16M x 16
  – 8M x 32
• Power Supply IS42VSxxx
  – Vdd/Vddq = 1.8V
• Packages: x8
  –TSOP II (54) x16
  –TSOP II (54) x32
  – TSOP II (86)
• Temperature Range: Industrial (
  –40 ºC to 85 ºC) FEBRUARY 2015 DESCRIPTION ISSI's 256Mb Synchronous DRAM achieves high-speed data.