A0-A11 BA0, BA1 DQ0 to DQ15 CLK CKE CS RAS CAS Address Input Bank Select Address Data I/O System Clock Input Clock Enable Chip Select Row Address Strobe Command Column Address Strobe Command WE LDQM UDQM VDD GND VDDQ GNDQ NC Write Enable Lower Bye, Input/Output Mask Upper Bye, Input/Output Mask Power Ground Power Supply for DQ Pin Ground for DQ Pin No Conne.
• Clock frequency: 100, 83, 66 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Single 1.8V power supply
• LVTTL interface
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Self refresh modes
• 4096 refresh cycles every 64 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge command
• Byte controlled by LDQM and UDQ.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IS42VS16400E |
ISSI |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM | |
2 | IS42VS16400L |
Integrated Silicon Solution |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM | |
3 | IS42VS16100C1 |
Integrated Silicon Solution |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM | |
4 | IS42VS16100D |
Integrated Silicon Solution |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM | |
5 | IS42VS16100E |
ISSI |
16Mb SYNCHRONOUS DYNAMIC RAM | |
6 | IS42VS16100F |
ISSI |
512K Words x 16 Bits x 2 Banks 16Mb SDRAM | |
7 | IS42VS16160D |
Integrated Silicon Solution |
256-MBIT SYNCHRONOUS DRAM | |
8 | IS42VS16160J |
ISSI |
256Mb Synchronous DRAM | |
9 | IS42VS32800J |
ISSI |
256Mb Synchronous DRAM | |
10 | IS42VS83200D |
Integrated Silicon Solution |
256-MBIT SYNCHRONOUS DRAM | |
11 | IS42VS83200J |
ISSI |
256Mb Synchronous DRAM | |
12 | IS42VM16160E |
ISSI |
4M x 16Bits x 4Banks Mobile Synchronous DRAM |