IS41LV16100S - Integrated Silicon Solution

IS41LV16100S 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes.

Features

• Extended Data-Out (EDO) Page Mode access cycle
• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval: Refresh Mode: 1,024 cycles /16 ms RAS-Only, CAS-before-RAS (CBR), and Hidden Self refresh Mode - 1,024 cycles / 128ms
• JEDEC standard pinout
• Single power supply: 5V ± 10% (IS41C16100S) 3.3V ± 10% (IS41LV16100S)
• Byte Write and Byte Read operation via two CAS
• Industrail Temperature Range -40°C to 85°C www.DataSheet4U.com DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an a.