IS41LV16105B - Integrated Silicon Solution

IS41LV16105B 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE

The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41LV16105B ideal for use in 16-, 32-bit wide data bus systems. These features m.

Features

• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval: — 1,024 cycles/16 ms
• Refresh Mode: — RAS-Only, CAS-before-RAS (CBR), and Hidden
• JEDEC standard pinout
• Single power supply: 3.3V ± 10%
• Byte Write and Byte Read operation via two CAS
• Extended Temperature Range: -30 C to +85 C
• Industrial Temperature Range: -40oC to +85oC
• Lead-free available o o www.DataSheet4U.com ISSI APRIL 2005 ® DESCRIPTION The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page Mode allows 1,024 random accesses within a single row with ac.