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IS41LV16100S |
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| Part Number | IS41LV16100S |
| Manufacturer | Integrated Silicon Solution |
| Description | The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode a... |
| Features |
• Extended Data-Out (EDO) Page Mode access cycle • TTL compatible inputs and outputs; tristate I/O • Refresh Interval: Refresh Mode: 1,024 cycles /16 ms RAS-Only, CAS-before-RAS (CBR), and Hidden Self refresh Mode - 1,024 cycles / 128ms • JEDEC standard pinout • Single power supply: 5V ± 10% (IS41C16100S) 3.3V ± 10% (IS41LV16100S) • Byte Write and Byte Read operation via two CAS • Industrail Temperature Range -40°C to 85°C www.DataSheet4U.com DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an a... |
| Document |
 IS41LV16100S Data Sheet
PDF 569.28KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IS41LV16100 |
Integrated Silicon Solution |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
|
| 2 | IS41LV16100A |
Integrated Silicon Solution |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
|
| 3 | IS41LV16100B |
Integrated Silicon Solution |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE |
|
| 4 | IS41LV16105 |
Integrated Silicon Solution |
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
|
| 5 | IS41LV16105B |
Integrated Silicon Solution |
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE |
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