® ADVANCED INFORMATION JANUARY 2005 FEATURES • Two-Wire Serial Interface, I2CTM compatible – Bidirectional data transfer protocol – 400 kHz (2.5V) and 1 MHz (5.0V) compatibility • Organization: – 256 x 8-bit • Data Protection Features – Write Protect Pin – Permanent Software Protection • 16-Byte Page Write Buffer – Partial Page-writes permitted • Low Powe.
• Two-Wire Serial Interface, I2CTM compatible
– Bidirectional data transfer protocol
– 400 kHz (2.5V) and 1 MHz (5.0V) compatibility
• Organization:
– 256 x 8-bit
• Data Protection Features
– Write Protect Pin
– Permanent Software Protection
• 16-Byte Page Write Buffer
– Partial Page-writes permitted
• Low Power CMOS Technology
– Active Current less than 2 mA (5V)
– Standby Current less than 6 µA (5V)
– Standby Current less than 2 µA (2.5V)
• Low Voltage Operation
– IS34C02-2: Vcc = 1.8V to 5.5V
– IS34C02-3: Vcc = 2.5V to 5.5V
• Random or Sequential Read Modes
• Filtered Inputs for Noise Suppr.
® ADVANCED INFORMATION JANUARY 2005 FEATURES • Two-Wire Serial Interface, I2CTM compatible – Bidirectional data trans.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IS34C02B |
ISSI |
2K-bit 2-WIRE SERIAL CMOS EEPROM | |
2 | IS34C02B |
ISSI |
2K-bit 2-WIRE SERIAL CMOS EEPROM | |
3 | IS3403 |
FORESEE |
P-Channel Enhancement Mode MOSFET | |
4 | IS3405 |
FORESEE |
P-Channel Enhancement Mode MOSFET | |
5 | IS341W |
ISOCOM |
Photocoupler | |
6 | IS34MC01GA08 |
ISSI |
3.3V 1Gb SLC NAND Flash Memory | |
7 | IS34MC01GA16 |
ISSI |
3.3V 1Gb SLC NAND Flash Memory | |
8 | IS34ML01G081 |
ISSI |
1Gb (x8) 3.3V NAND FLASH MEMORY | |
9 | IS34ML01G084 |
ISSI |
1Gb(x8) 3.3V NAND FLASH MEMORY | |
10 | IS34ML02G084 |
ISSI |
2Gb(x8) 3.3V NAND FLASH MEMORY | |
11 | IS34ML04G0168 |
ISSI |
4Gb SLC-8b ECC | |
12 | IS34ML04G081 |
ISSI |
4Gb 3.3V X8 NAND FLASH MEMORY |