IS3405 - FORESEE

IS3405 P-Channel Enhancement Mode MOSFET

ST I S 3405 S ep.15 2005 P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S ID -3A F E AT UR E S ( m W ) Max R DS (ON) S uper high dense cell design for low R DS (ON ). -30V 100 @ V G S = -10V 130 @ V G S = -4.5V R ugged and reliable. S OT-23 P ackage. D S OT-23 D S G G S ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless .

Features

, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = -250uA V GS = -10V, ID =-3A V GS = -4.5V, ID = -2A V DS = -5V, V GS = -10V V DS = -5V, ID = - 3A Min Typ C Max Unit -30 -1 100 -1 -1.5 OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage V uA nA V ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance -3 75 100 8 8 435 90 60 V DD = -15V, ID = -1A, V GE N = - 10V, R GE N = 6 ohm V DS =-15V,ID =-3A,V GS =-10V V DS =-15V, ID = -3A, V GS =-10V 8 6.8 37 13 7.8 0.5.