IS3403 - FORESEE

IS3403 P-Channel Enhancement Mode MOSFET

I S 3403 ST AUG .16.2005 P -C hannel E nhancement Mode MOS FE T P R ODUC T S UMMAR Y V DS S ID -3A F E AT UR E S ( m W ) Max R DS (ON) S uper high dense cell design for low R DS (ON ). 65 @ V G S = -10V 80 @ V G S = -4.5V R ugged and reliable. S OT-23 P ackage. D -30V S OT-23 D S G G S ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P.

Features

= 20V, V DS = 0V V DS = V GS , ID = -250uA V GS = -10V, ID =-3A V GS = -4.5V, ID = -1A V DS = -5V, V GS = -10V V DS = -5V, ID = - 3A Min Typ C Max Unit -30 -1 100 -1 -1.5 -3 44 60 OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage V uA nA V ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 65 m-ohm 80 m-ohm A 7 870 290 180 V DD = -10V, ID = -1A, V GE N = - 4.5V, R GE N = 6 ohm V DS =-10V,ID =-3A,V GS =-4.5V V DS =-10V, ID = -3A, V GS =-4.5V 27 67 35 26 7.