Isc N-Channel MOSFET Transistor IRLS3036 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS .
·With To-263(D2PAK) package
·Low input capacitance and gate charge
·Low gate input resistance
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
60
VGSS ID IDM
Gate-Source Voltage
Drain Current-ContinuousTc=25℃ Tc=100℃
Drain Current-Single Pulsed
±16
300 210
1000
PD
Total Dissipation @TC=25℃
380
Tch
Max. Operating Junction Temperature
175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
·THERMAL .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRLS3034-7PPBF |
International Rectifier |
40V Single N-Channel HEXFET Power MOSFET | |
2 | IRLS3034PBF |
International Rectifier |
40V Single N-Channel HEXFET Power MOSFET | |
3 | IRLS3034PBF |
INCHANGE |
N-Channel MOSFET | |
4 | IRLS3036-7PPBF |
International Rectifier |
60V Single N-Channel HEXFET Power MOSFET | |
5 | IRLS3036PBF |
International Rectifier |
60V Single N-Channel HEXFET Power MOSFET | |
6 | IRLS3813 |
INCHANGE |
N-Channel MOSFET | |
7 | IRLS3813PBF |
International Rectifier |
POWER MOSFET | |
8 | IRLS-G5653 |
International Rectifier |
INTEGRATED SWITCHER | |
9 | IRLS4030 |
INCHANGE |
N-Channel MOSFET | |
10 | IRLS4030-7PPBF |
International Rectifier |
100V Single N-Channel HEXFET Power MOSFET | |
11 | IRLS4030PBF |
International Rectifier |
100V Single N-Channel HEXFET Power MOSFET | |
12 | IRLS510A |
Fairchild Semiconductor |
Advanced Power MOSFET |