IRLS510A - Fairchild Semiconductor

IRLS510A Advanced Power MOSFET

www.DataSheet4U.com Advanced Power MOSFET FEATURES n Logic-Level Gate Drive n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V n Lower RDS(ON) : 0.336 Ω (Typ.) IRLS510A BVDSS = 100 V RDS(on) = 0.44 Ω ID = 4.5 A TO-2.

Features

n Logic-Level Gate Drive n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V n Lower RDS(ON) : 0.336 Ω (Typ.) IRLS510A BVDSS = 100 V RDS(on) = 0.44 Ω ID = 4.5 A TO-220F 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=100oC ) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed .