IRLS3036 |
Part Number | IRLS3036 |
Manufacturer | INCHANGE |
Description | Isc N-Channel MOSFET Transistor IRLS3036 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations... |
Features |
·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±16 300 210 1000 PD Total Dissipation @TC=25℃ 380 Tch Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL ... |
Document |
IRLS3036 Data Sheet
PDF 254.24KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRLS3034-7PPBF |
International Rectifier |
40V Single N-Channel HEXFET Power MOSFET | |
2 | IRLS3034PBF |
International Rectifier |
40V Single N-Channel HEXFET Power MOSFET | |
3 | IRLS3034PBF |
INCHANGE |
N-Channel MOSFET | |
4 | IRLS3036-7PPBF |
International Rectifier |
60V Single N-Channel HEXFET Power MOSFET | |
5 | IRLS3036PBF |
International Rectifier |
60V Single N-Channel HEXFET Power MOSFET |