IRLMS1902 - International Rectifier

IRLMS1902 HEXFET Power MOSFET

Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable devi.

Features

ings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Max. 3.2 2.6 18 1.7 13 ± 12 5.0 -55 to + 150 Units A W mW/°C V V/ns °C Thermal Resistance Ratings Parameter RθJA Maximum Junction-to-Ambient „ Min. ––– Typ. ––– Max 75 Units °C/W www.irf.com 1 3/18/04 IRLMS1902 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) .