These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with R.
ain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Gate-to-Source Voltage Junction and Storage Temperature Range Max. -20 -5.6 -4.5 -45 2.0 1.3 0.016 31 ± 12 -55 to + 150 Units V A W W/°C mJ V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambient Max. 62.5 Units °C/W www.irf.com 1 01/13/03 IRLMS6802 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRLMS6802PBF |
International Rectifier |
HEXFET Power MOSFET | |
2 | IRLMS6702 |
International Rectifier |
HEXFET Power MOSFET | |
3 | IRLMS6702PBF |
IRF |
Power MOSFET | |
4 | IRLMS1503 |
International Rectifier |
HEXFET Power MOSFET | |
5 | IRLMS1503PBF |
International Rectifier |
Power MOSFET | |
6 | IRLMS1503PBF-1 |
International Rectifier |
Power MOSFET | |
7 | IRLMS1902 |
International Rectifier |
HEXFET Power MOSFET | |
8 | IRLMS2002 |
International Rectifier |
HEXFET Power MOSFET | |
9 | IRLMS2002PbF |
International Rectifier |
HEXFET Power MOSFET | |
10 | IRLMS4502 |
International Rectifier |
HEXFET Power MOSFET | |
11 | IRLMS5703 |
International Rectifier |
HEXFET Power MOSFET | |
12 | IRLM110A |
International Rectifier |
HEXFET Power MOSFET |