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IRLMS1902 |
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| Part Number | IRLMS1902 |
| Manufacturer | International Rectifier |
| Description | Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast... |
| Features |
ings
Parameter
ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
3.2 2.6 18 1.7 13 ± 12 5.0 -55 to + 150
Units
A W
mW/°C
V V/ns °C
Thermal Resistance Ratings
Parameter
RθJA Maximum Junction-to-Ambient
Min.
Typ.
Max
75
Units
°C/W
www.irf.com
1
3/18/04
IRLMS1902
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
... |
| Document |
 IRLMS1902 Data Sheet
PDF 187.63KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRLMS1503 |
International Rectifier |
HEXFET Power MOSFET |
|
| 2 | IRLMS1503PBF |
International Rectifier |
Power MOSFET |
|
| 3 | IRLMS1503PBF-1 |
International Rectifier |
Power MOSFET |
|
| 4 | IRLMS2002 |
International Rectifier |
HEXFET Power MOSFET |
|
| 5 | IRLMS2002PbF |
International Rectifier |
HEXFET Power MOSFET |
|