IRHNB7264SE - International Rectifier

IRHNB7264SE RADIATION HARDENED POWER MOSFET

PD - 91738A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3) Product Summary Part Number IRHNB7264SE Radiation Level RDS(on) 100K Rads (Si) 0.11Ω ID 34A IRHNB7264SE 250V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY ™ ® SMD-3 International Rectifier’s RADHardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This tec.

Features

! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings www.DataSheet4U.com ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Pre-Irradiation Units 34 21 136 300 2.4 ±20 500 34 30 2.5 -55 to 150 300 (for 5 sec.) 3.3 (Typical) Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Vo.