IRHNB7260 - International Rectifier

IRHNB7260 RADIATION HARDENED POWER MOSFET

PD - 91798A RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) Product Summary Part Number Radiation Level IRHNB7260 100K Rads (Si) IRHNB3260 300K Rads (Si) IRHNB4260 600K Rads (Si) IRHNB8260 1000K Rads (Si) R DS(on) 0.070Ω 0.070Ω 0.070Ω 0.070Ω ID 43A 43A 43A 43A IRHNB7260 200V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY ™ ® SMD-3 International Rectifier’s RA.

Features

n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings www.DataSheet4U.com ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Pre-Irradiation Units 43 27 172 300 2.4 ±20 500 43 30 5.7 -55 to 150 300 (for 5 Sec.) 3.5 (Typical ) Parameter Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltag.