Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. These new short circuit rated devic.
• Short circuit rated - 10µs @ 125°C, V GE = 15V
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
C
Short Circuit Rated Fast IGBT
VCES = 600V
G E
VCE(sat) ≤ 2.9V
@VGE = 15V, I C = 16A
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRGPC30F |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
2 | IRGPC30FD2 |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
3 | IRGPC30MD2 |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
4 | IRGPC30S |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
5 | IRGPC30U |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
6 | IRGPC30UD2 |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
7 | IRGPC20F |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
8 | IRGPC20K |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
9 | IRGPC20M |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
10 | IRGPC20MD2 |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
11 | IRGPC20U |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
12 | IRGPC40 |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |