Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute Maximum Ratings .
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
G E C
Fast Speed IGBT
VCES = 600V VCE(sat) ≤ 2.8V
@VGE = 15V, I C = 9.0A
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
TO-247AC
Absolute Maximum .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRGPC20K |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
2 | IRGPC20M |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
3 | IRGPC20MD2 |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
4 | IRGPC20U |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
5 | IRGPC30F |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
6 | IRGPC30FD2 |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
7 | IRGPC30M |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
8 | IRGPC30MD2 |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
9 | IRGPC30S |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
10 | IRGPC30U |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
11 | IRGPC30UD2 |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
12 | IRGPC40 |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |