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IRGPC30M |
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| Part Number | IRGPC30M |
| Manufacturer | IRF |
| Description | Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requi... |
| Features |
• Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve C Short Circuit Rated Fast IGBT VCES = 600V G E VCE(sat) ≤ 2.9V @VGE = 15V, I C = 16A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high... |
| Document |
 IRGPC30M Data Sheet
PDF 250.13KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IRGPC30F |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 2 | IRGPC30FD2 |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 3 | IRGPC30MD2 |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 4 | IRGPC30S |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 5 | IRGPC30U |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
|