IRGPC20F IRF INSULATED GATE BIPOLAR TRANSISTOR Datasheet, en stock, prix

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IRGPC20F

IRF
IRGPC20F
IRGPC20F IRGPC20F
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Part Number IRGPC20F
Manufacturer IRF
Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requi...
Features
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Fast Speed IGBT VCES = 600V VCE(sat) ≤ 2.8V @VGE = 15V, I C = 9.0A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute Maximum ...

Document Datasheet IRGPC20F Data Sheet
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