IRGP4078D-EPBF - International Rectifier

IRGP4078D-EPBF INSULATED GATE BIPOLAR TRANSISTOR

  IRGP4078DPbF IRGP4078D-EP  C   VCES = 600V INOMINAL = 50A G E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175°C • 5 µs short circuit SOA • Square RBSOA • 100% of the parts tested for ILM.

Features

• Low VCE (ON) Trench IGBT Technology
• Low Switching Losses
• Maximum Junction temperature 175°C
• 5 µs short circuit SOA
• Square RBSOA
• 100% of the parts tested for ILM
• Positive VCE (ON) Temperature co-efficient
• Ultra-low VF Hyperfast Diode
• Tight parameter distribution Benefits
• Device optimized for induction heating and soft switching applications
• High Efficiency due to Low VCE(ON), Low Switching Losses and Ultra-low VF
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI TJ(MAX) = 175°C VCE(ON) typ. = 1.9V n-chan.