IRGIB7B60KD - International Rectifier

IRGIB7B60KD INSULATED GATE BIPOLAR TRANSISTOR

PD - 94620B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. IRGIB7B60KD C VCES = 600V IC = 8.0A, TC=100°C G E tsc > 10µs, TJ=150°C n-.

Features

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• Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. IRGIB7B60KD C VCES = 600V IC = 8.0A, TC=100°C G E tsc > 10µs, TJ=150°C n-channel Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation. VCE(on) typ. = 1.8V TO-220AB FullPak Absolute Maximum Ratings Parameter www.DataSheet4U.com Max. 600 12 8.0 Units V A VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = .