IRGIB6B60KD - International Rectifier

IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR

PD-94427D IRGIB6B60KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. G E C VCES = 600V IC = 6.0A, TC=90°C tsc > 10µ.

Features

• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient. G E C VCES = 600V IC = 6.0A, TC=90°C tsc > 10µs, TJ=175°C n-channel VCE(on) typ. = 1.8V Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation. Absolute Maximum Ratings www.DataSheet4U.com TO-220 Full-Pak Max. 600 11 7.0 A 22 22 9.0 6.0 18 2500 ±20 38 19 -55 to +175 °C 300 (0.063 in. (1.6mm) .