IRGI4061DPBF - International Rectifier

IRGI4061DPBF INSULATED GATE BIPOLAR TRANSISTOR

PD - 97114 IRGI4061DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • • • Low VCE (on) Trench IGBT Technology Low Switching Losses 5µs SCSOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free .

Features

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• Low VCE (on) Trench IGBT Technology Low Switching Losses 5µs SCSOA Square RBSOA 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient. Ultra Fast Soft Recovery Co-pak Diode Tighter Distribution of Parameters Lead-Free Package G E C VCES = 600V IC = 11A, TC = 100°C tsc > 5µs, Tjmax = 150°C n-channel C VCE(on) typ. = 1.35V Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due to Low VCE (ON) and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current.