IRG4PH50UPbF - International Rectifier

IRG4PH50UPbF Ultra Fast Speed IGBT

PD - 95191 IRG4PH50UPbF INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • Optimized for power conversion; SMPS, UPS and welding • Industry standar.

Features

• UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode
• New IGBT design provides tighter parameter distribution and higher efficiency than previous generations
• Optimized for power conversion; SMPS, UPS and welding
• Industry standard TO-247AC package
• Lead-Free C Ultra Fast Speed IGBT VCES = 1200V G E VCE(on) typ. = 2.78V @VGE = 15V, IC = 24A n-channel Benefits
• Higher switching frequency capability than competitive IGBTs
• Highest efficiency available
• Much lower conduction losses than MOSFETs
• More efficient than short circ.