IRG4PH50UPbF |
Part Number | IRG4PH50UPbF |
Manufacturer | International Rectifier |
Description | PD - 95191 IRG4PH50UPbF INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design pr... |
Features |
• UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • Optimized for power conversion; SMPS, UPS and welding • Industry standard TO-247AC package • Lead-Free C Ultra Fast Speed IGBT VCES = 1200V G E VCE(on) typ. = 2.78V @VGE = 15V, IC = 24A n-channel Benefits • Higher switching frequency capability than competitive IGBTs • Highest efficiency available • Much lower conduction losses than MOSFETs • More efficient than short circ... |
Document |
IRG4PH50UPbF Data Sheet
PDF 614.24KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | IRG4PH50U |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
2 | IRG4PH50UD |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
3 | IRG4PH50UDPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
4 | IRG4PH50K |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR | |
5 | IRG4PH50KD |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |