IRG4PH50KDPBF - International Rectifier

IRG4PH50KDPBF INSULATED GATE BIPOLAR TRANSISTOR

www.DataSheet.co.kr PD- 95189 IRG4PH50KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • .

Features

Short Circuit Rated UltraFast IGBT C VCES = 1200V G E VCE(on) typ. = 2.77V @VGE = 15V, IC = 24A n-ch an nel Benefits
• Latest generation 4 IGBT's offer highest power density motor controls possible
• HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses
• This part replaces the IRGPH50KD2 and IRGPH50MD2 products
• For hints see design tip 97003 TO-247AC Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM tsc VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Em.