IRG4PH40UD2 - IRF

IRG4PH40UD2 Insulated Gate Bipolar Transistor

PD - 94739 IRG4PH40UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultraf.

Features

• UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package C UltraFast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.72V @VGE = 15V, IC = 20A n-channel Benefits • Higher switching frequency capability than competitive IGBTs • Highest efficiency available • HEXFRED diodes optimize.