PD- 91621B IRG4PH40UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafa.
• UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode
• New IGBT design provides tighter parameter distribution and higher efficiency than previous generations
• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard TO-247AC package
C
UltraFast CoPack IGBT
VCES = 1200V
G E
VCE(on) typ. = 2.43V
@VGE = 15V, IC = 21A
n-ch an nel
Benefits
• Higher switching frequency capability than competitive IGBTs
• Highest efficiency available
• HEXFRED diodes optimi.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IRG4PH40U |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
2 | IRG4PH40UD2 |
IRF |
Insulated Gate Bipolar Transistor | |
3 | IRG4PH40UD2-E |
IRF |
Insulated Gate Bipolar Transistor | |
4 | IRG4PH40UD2-EP |
IRF |
Insulated Gate Bipolar Transistor | |
5 | IRG4PH40UD2PBF |
IRF |
Insulated Gate Bipolar Transistor | |
6 | IRG4PH40UDPbF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
7 | IRG4PH40UPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
8 | IRG4PH40K |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
9 | IRG4PH40KD |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
10 | IRG4PH40KDPBF |
International Rectifier |
INSUALATED GATE BIPOLAR TRANSISTOR | |
11 | IRG4PH40KPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR | |
12 | IRG4PH40S |
International Rectifier |
Standard Speed IGBT |